Fluorographane: a promising material for bipolar doping of MoS2
Deniz Çakır1, Francois M Peeters
1Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2610 Antwerpen, Belgium. dcakir79@gmail.com francois.peeters@uantwerpen.be.
Physical Chemistry Chemical Physics : PCCP
|October 2, 2015
Summary
Fluorographane interfaces with molybdenum disulfide (MoS2) enable tunable electronic properties. This breakthrough allows for switching between n-type and p-type conductivity, crucial for advanced 2D material applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Computational Chemistry
Background:
- Two-dimensional (2D) materials like graphene and molybdenum disulfide (MoS2) offer unique electronic properties.
- Controlling the interface properties of 2D materials is key to developing novel electronic devices.
- Fluorographane, a functionalized graphene derivative, presents opportunities for interface engineering.
Purpose of the Study:
- To investigate the structural and electronic properties of fluorographane/MoS2 interfaces.
- To explore the potential of fluorographane for tuning the electronic behavior of MoS2.
- To assess the feasibility of creating tunable Schottky barriers at these interfaces.
Main Methods:
- First principles calculations were employed to simulate the interfaces.
- Analysis of structural relaxations and electronic band structures was performed.
- The effect of functionalization and external electric fields was systematically studied.
Main Results:
- Unsymmetrical functionalization of graphene with H and F creates an intrinsic dipole moment.
- This dipole moment allows for switching MoS2 monolayer conductivity between n-type and p-type.
- Vanishing n-type/p-type Schottky barrier heights were achieved at MoS2-fluorographane contacts.
- Perpendicular electric fields enable tuning of Schottky barrier size and doping levels.
Conclusions:
- Fluorographane is a promising material for achieving bipolar doping of MoS2.
- The ability to tune electronic properties is vital for novel technological applications of 2D materials.
- These findings pave the way for advanced electronic devices based on 2D heterostructures.
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