Fabrication of 2D Heterojunction in Graphene via Low Energy N2(+) Irradiation

Substitutional doping in graphene is locally induced with very low energy nitrogen ions. Irradiated and nonirradiated areas exhibit different charge carrier densities and are separated by a sharp boundary, stable up to 750 °C. The way towards lithographic control of the electronic properties of graphene by ion irradiation is paved, providing a proof of principle for the fabrication of 2D graphene-based heterojunctions.