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Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

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Giant electro-optic effect in Ge/SiGe coupled quantum wells.

Jacopo Frigerio¹, Vladyslav Vakarin², Papichaya Chaisakul²

¹L-NESS, Dipartimento di Fisica, Politecnico di Milano, Polo di Como, Via Anzani 42, I 22100 Como, Italy.

Scientific Reports

|October 20, 2015

Summary

Researchers achieved a giant electro-optic effect in germanium/silicon-germanium (Ge/SiGe) coupled quantum wells, enabling more efficient and high-speed optical modulators for silicon photonics. This breakthrough enhances on-chip communication technologies.

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Area of Science:

Materials Science
Optoelectronics
Quantum Physics

Background:

Silicon photonics is crucial for next-generation on-chip communications.
Developing compact, low-power optical modulators remains a significant challenge in silicon photonics.

Purpose of the Study:

To report a giant electro-optic effect in Ge/SiGe coupled quantum wells.
To demonstrate enhanced optical modulator performance using this novel effect.

Main Methods:

Utilizing an anomalous quantum-confined Stark effect in Ge/SiGe coupled quantum wells.
Measuring refractive index variation under applied bias voltage.

Main Results:

Observed a giant electro-optic effect with a refractive index change of 2.3 × 10⁻³ at 1.5 V.
Achieved a high modulation efficiency of 0.046 V cm (V(π)L(π)).

Conclusions:

The demonstrated giant electro-optic effect in Ge/SiGe coupled quantum wells significantly enhances modulator performance.
This material system offers a pathway for developing efficient, high-speed phase modulators for silicon photonics.