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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor.

Nahee Park, Haeyong Kang, Jeongmin Park

¹IBULE Photonics Co. Ltd. , 145 Gaetbeol-ro, Yeonsu-gu, Incheon 406-840, Republic of Korea.

|October 22, 2015

Summary

We studied ferroelectric polarization effects on graphene charge transport using a novel field-effect transistor (FET). This revealed asymmetric conductance and unusual hysteresis, offering insights into 2D material interactions.

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Ferroelectric materials offer tunable polarization fields.
Two-dimensional (2D) materials exhibit unique electronic properties.
Integrating ferroelectrics with 2D materials is key for novel electronic devices.

Purpose of the Study:

To investigate the impact of ferroelectric polarization on charge transport in graphene.
To understand the interplay between ferroelectric switching and 2D material conductance.
To develop a model explaining the observed phenomena.

Main Methods:

Fabrication of a graphene field-effect transistor (FET) on a ferroelectric (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT) substrate.
Utilizing hexagonal boron nitride (hBN) to isolate graphene and preserve its intrinsic properties.
Performing wide-range gate-voltage (VG) sweeps to observe conductance changes.

Main Results:

Observed asymmetric channel conductance and antihysteretic behavior in graphene due to ferroelectric polarization.
Demonstrated a transition from antihysteresis to normal ferroelectric hysteresis based on the VG sweep range.
Identified coupling between antihysteresis, current saturation, and conductance variation with ferroelectric switching.

Conclusions:

Ferroelectric polarization significantly influences charge transport in 2D materials like graphene.
The developed model explains the complex coupling of ferroelectric switching and polarization-assisted charge trapping.
Findings provide a framework for combining 2D materials with ferroelectrics for advanced electronic applications.

Keywords:

PMN-PT antihysteresis ferroelectric memory ferroelectric single-crystal graphene transistor

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