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Updated: Mar 31, 2026
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Tellurium-Assisted Low-Temperature Synthesis of MoS2 and WS2 Monolayers
Yongji Gong, Zhong Lin, Gonglan Ye
1Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, Johnson-Rowland Science Center , 110 Eighth Street, Troy, New York 12180, United States.
Abstract:
Chemical vapor deposition (CVD) is a scalable method able to synthesize MoS2 and WS2 monolayers. In this work, we reduced the synthesis temperature by 200 °C only by introducing tellurium (Te) into the CVD process. The as-synthesized MoS2 and WS2 monolayers show high phase purity and crystallinity. The optical and electrical performance of these materials is comparable to those synthesized at higher temperatures. We believe this work will accelerate the industrial synthesis of these semiconducting monolayers.
