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Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires
Alexander Dobrovolsky1, Jan E Stehr1, Supanee Sukrittanon2
1Department of Physics, Chemistry and Biology, Linköping University, 581 83, Linköping, Sweden.
Small (Weinheim an Der Bergstrasse, Germany)
|October 28, 2015
Summary
Gallium phosphide/gallium nitride phosphide (GaP/GaNP) core/shell nanowires act as microcavities. These semiconductor nanowires exhibit Fabry-Perot modes, paving the way for future laser applications.
Area of Science:
- Semiconductor Nanowires
- Optoelectronics
- Photonics
Background:
- Semiconductor nanowires (NWs) are crucial building blocks for optoelectronics and photonics.
- Gallium phosphide/gallium nitride phosphide (GaP/GaNP) nanowires present a novel material system for these applications.
Purpose of the Study:
- To investigate the potential of individual GaP/GaNP core/shell nanowires as Fabry-Perot (FP) microcavities.
- To analyze the optical properties and mode behavior of these nanowires.
Main Methods:
- Growth of GaP/GaNP core/shell nanowires on silicon substrates using molecular beam epitaxy.
- Microphotoluminescence (μ-PL) measurements on individual nanowires to observe optical emission.
Main Results:
- Individual GaP/GaNP nanowires demonstrated Fabry-Perot (FP) microcavity behavior.
- Periodic undulations in photoluminescence intensity confirmed the presence of FP cavity modes.
- The nanowire end facets acted as reflecting mirrors, facilitating mode formation.
Conclusions:
- GaP/GaNP core/shell nanowires can function as effective Fabry-Perot microcavities.
- The observed FP modes are a significant step towards achieving lasing in this quasidirect bandgap semiconductor nanowire system.
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