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Dielectric Encapsulated Niobium Films to Achieve Higher Processing Temperatures
Kirsten L Lina1, Anna E Fox1, Paul D Dresselhaus1
1National Institute of Standards and Technology, Boulder, CO 80305 USA.
IEEE Transactions on Applied Superconductivity : a Publication of the IEEE Superconductivity Committee
|August 13, 2026
Summary
Protective dielectric capping layers, particularly silicon nitride (SiNx), enable niobium (Nb) superconductive electronics to withstand higher fabrication temperatures up to 400 °C, preventing performance degradation.
Area of Science:
- Materials Science
- Superconductivity
- Microelectronics Fabrication
Background:
- Niobium (Nb)-based superconductive electronics require low processing temperatures (<150 °C) to prevent performance degradation.
- Higher thermal budgets are needed for advanced fabrication and multilayer integration.
Purpose of the Study:
- Investigate the efficacy of dielectric capping layers in protecting Nb wiring.
- Determine the maximum processing temperature achievable with protective caps.
Main Methods:
- Deposition of 400 nm Nb films on oxidized silicon wafers.
- Annealing samples (capped and uncapped) in argon up to 450 °C.
- Assessing thermal stability via sheet resistance and cryogenic measurements.
Main Results:
- Pristine Nb films degrade significantly above 300 °C.
- Dielectric caps, especially silicon nitride (SiNx), mitigate thermal degradation.
- SiNx-capped Nb films maintained superconducting properties up to 400 °C.
Conclusions:
- Silicon nitride (SiNx) encapsulation effectively preserves Nb superconductivity at elevated temperatures.
- This enables an expanded thermal budget for Nb-based electronics fabrication.
- Results support scalable fabrication and multilayer integration of superconductive devices.
Keywords:
Superconducting niobium fabrication
