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a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths
Xiaofan Jiang1,2,3, Zhongyuan Ma1,2,3, Jun Xu1,2,3
1School of Electronic Science and Engineering, Nanjing University, Nanjing, 210093, China.
Scientific Reports
|October 29, 2015
Summary
Ultra-low power resistive random access memory (RRAM) was achieved by tuning silicon dangling bonds in a novel Al/a-SiNx:H/p(+)-Si structure. Increasing the N/Si ratio reduced programming current to below 1 μA, enabling next-generation non-volatile memory.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Development of next-generation non-volatile memory is crucial for advanced electronics.
- Ultra-low power consumption is a key requirement for future memory technologies.
- Resistive switching memory (RRAM) offers a promising pathway for high-performance, low-power memory.
Purpose of the Study:
- To achieve ultra-low power and high-performance resistive random access memory (RRAM) using a silicon-based structure.
- To investigate the role of silicon dangling bonds and the N/Si ratio in controlling RRAM characteristics.
- To explore the conduction mechanisms in both low-resistance and high-resistance states of the RRAM device.
Main Methods:
- Fabrication of an Al/a-SiNx:H/p(+)-Si RRAM device structure.
- Tuning of silicon dangling bond conduction paths by adjusting the N/Si ratio (x) in the amorphous silicon nitride (a-SiNx:H) layer.
- Experimental characterization of current-voltage (I-V) curves and their temperature dependence.
- Theoretical calculation of I-V curves to elucidate conduction mechanisms.
Main Results:
- A high-performance, ultra-low power RRAM device was successfully realized with the Al/a-SiNx:H/p(+)-Si structure.
- Increasing the N/Si ratio (x) in a-SiNx:H significantly reduced the programming current to below 1 μA.
- Conduction in the low-resistance state (LRS) was confirmed to follow trap-assisted tunneling.
- Conduction in the high-resistance state (HRS) was dominated by hopping or Poole-Frenkel (P-F) processes.
Conclusions:
- Tuning silicon dangling bond conduction paths by controlling the N/Si ratio is an effective strategy for ultra-low power RRAM.
- The introduction of hydrogen in the a-SiNx:H layer provides a novel method for managing these conduction paths.
- This research opens new avenues for developing ultra-low power silicon-based RRAM technologies for next-generation non-volatile memory applications.
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