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Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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D Imanaka1, S Sharmin1, M Hashisaka1

  • 1Department of Physics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro 152-8551, Japan.

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|November 10, 2015
PubMed
Summary

We observed spin blockade in a GaAs double quantum dot, sensitive to nuclear spin polarization. This leads to unique current signals, useful for future spin control.

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Area of Science:

  • Quantum physics
  • Condensed matter physics
  • Spintronics

Background:

  • Quantum dots are semiconductor nanostructures that confine electrons.
  • Spin blockade is a phenomenon in quantum dots where electron transport is controlled by electron spin.
  • Nuclear spins in semiconductor materials can influence electron spins.

Purpose of the Study:

  • To experimentally identify exchange-induced spin blockade in a GaAs double quantum dot.
  • To investigate the role of nuclear-spin polarization in spin blockade.
  • To explore the potential applications of observed phenomena in spin manipulation.

Main Methods:

  • Experimental measurement of electrical transport through a GaAs double quantum dot.
  • Analysis of current spectra under varying conditions.
  • Numerical simulations to interpret experimental results.

Main Results:

  • Identified exchange-induced spin blockade in a GaAs double quantum dot.
  • Observed that transport suppression is linked to well-defined singlet and triplet states.
  • Detected unusual current spectra, including a sharp dip and asymmetric profile, near triplet resonance.
  • Numerical simulations suggest the current dip indicates identical nuclear-spin polarization in both dots.

Conclusions:

  • Dynamic nuclear-spin polarization significantly affects spin blockade by causing singlet-triplet mixing.
  • The observed current dip is a potential signature of identical nuclear-spin polarization.
  • These findings are promising for coherent spin manipulations in nuclear spin-containing materials.