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Updated: Mar 30, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Study of surface charges in ballistic deflection transistors
J-F Millithaler1, I Iñiguez-de-la-Torre, J Mateos
1Department of Electrical and Computer Engineering, University of Massachusetts, Lowell, MA 01854, USA.
Abstract:
This paper presents a comprehensive study of the behavior of surface charges in ballistic deflection transistors, at room temperature, where the in-plane geometry associating two drains with two gates in push-pull modes allows the control of electron path. Monte Carlo simulations were performed and compared with experimental data by using different models for accounting for surface charge effects. The simple model which assumes a constant and uniform value of the surface charge provides good results at equilibrium, but it is not able to correctly reproduce the BDT's complex behavior when biased. We have confirmed that for a correct description of the device operation it is necessary to use a model allowing the surface charge to adapt itself locally to the carrier concentration in its surroundings.
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