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Crystal-structure-dependent photoluminescence from InP nanowires
M Mattila1, T Hakkarainen, M Mulot
1Optoelectronics Laboratory, Helsinki University of Technology, PO BOX 3500, FIN-02015 HUT, Finland.
Nanotechnology
|November 13, 2015
Summary
Indium phosphide (InP) nanowires grown on InP substrates exhibit a unique blue-shifted photoluminescence. This shift is attributed to the wurtzite crystal structure, not quantum confinement effects.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Indium phosphide (InP) nanowires are crucial for optoelectronic applications.
- Controlling nanowire crystal structure impacts their optical properties.
Purpose of the Study:
- Investigate the formation and photoluminescence (PL) of InP nanowires.
- Determine the cause of PL blue-shift in vertically aligned InP nanowires.
Main Methods:
- Metal-organic vapor phase epitaxy (MOVPE) for InP nanowire growth.
- Scanning electron microscopy (SEM) for morphology analysis.
- X-ray diffraction (XRD) and transmission electron microscopy (TEM) for structural characterization.
Main Results:
- Vertically aligned InP nanowires were grown on InP(111)B substrates.
- A significant PL blue-shift (approx. 80 meV) was observed compared to the substrate.
- The blue-shift was correlated with nanowire orientation and attributed to the wurtzite crystal structure.
Conclusions:
- The wurtzite crystal structure in vertically aligned InP nanowires causes a PL blue-shift.
- This finding differs from typical quantum confinement effects in smaller diameter nanowires.
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