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Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction
Eunpa Kim1, Changhyun Ko2, Kyunghoon Kim3
1Laser Thermal Lab, Department of Mechanical Engineering, University of California, Berkeley, CA, 94720, USA.
Abstract:
Laser-assisted phosphorus doping is demonstrated on ultrathin transition-metal dichalcogenides (TMDCs) including n-type MoS2 and p-type WSe2 . Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser-assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.
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