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High thermoelectric performance in graphene nanoribbons by graphene/BN interface engineering
Van-Truong Tran1, Jérôme Saint-Martin, Philippe Dollfus
1IEF, Université Paris-sud, CNRS, UMR 8622, Bât 220, F-91405 Orsay, France.
Nanotechnology
|November 18, 2015
Summary
Atomistic simulations reveal graphene-hexagonal boron nitride (BN) heterostructures exhibit excellent thermoelectric properties. These materials achieve a high thermoelectric figure of merit (ZT) due to suppressed heat transport and enhanced electrical properties.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Thermoelectric materials convert heat energy into electrical energy.
- Graphene and hexagonal boron nitride (BN) are 2D materials with unique electronic and thermal properties.
- Heterostructures combining these materials offer potential for advanced thermoelectric devices.
Purpose of the Study:
- To investigate the thermoelectric properties of graphene/BN in-plane heterostructures.
- To understand the influence of structural arrangement on phonon and electron transport.
- To determine the potential for high thermoelectric figure of merit (ZT).
Main Methods:
- Atomistic simulations were employed to model the heterostructures.
- Analysis focused on phonon mode mismatch and electron transmission.
- The Seebeck coefficient and thermoelectric figure of merit (ZT) were calculated.
Main Results:
- Graphene/BN heterostructures exhibit significantly reduced phonon conductance due to phonon mode mismatch.
- Electron transmission is only weakly affected by the heterostructure formation.
- A high thermoelectric figure of merit (ZT > 0.8) was predicted in perfect structures, with ZT = 1.48 achievable with vacancies.
Conclusions:
- Graphene/BN heterostructures are promising for high-performance thermoelectric applications.
- Engineering phonon transport via structural design is key to enhancing ZT.
- Vacancies can further boost thermoelectric performance by degrading phonon transport.

