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Towards phasing using high X-ray intensity.

Lorenzo Galli1, Sang-Kil Son2, Thomas R M Barends3

  • 1Center for Free-Electron Laser Science, Deutsches Elektronen-Synchrotron DESY , Notkestrasse 85, Hamburg, 22607, Germany ; Department of Physics, University of Hamburg , Luruper Chaussee 149, Hamburg, 22761, Germany.

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|November 24, 2015
PubMed
Summary
This summary is machine-generated.

X-ray free-electron lasers (XFELs) enable macromolecular structure determination. This study quantifies electronic damage effects in serial femtosecond crystallography, proposing a novel phasing method using ionization contrast.

Keywords:
X-ray free-electron laserselectronic damagehigh XFEL doseshigh-intensity phasingradiation damageserial femtosecond crystallography

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Area of Science:

  • Structural biology
  • Biophysics
  • Crystallography

Background:

  • X-ray free-electron lasers (XFELs) offer advanced capabilities for macromolecular structure determination using serial femtosecond crystallography (SFX).
  • High XFEL intensity can cause significant electronic damage, including multiply ionizing atoms and altering scattering factors, particularly affecting heavy atoms through 'bleaching'.

Purpose of the Study:

  • To investigate the impact of electronic damage on experimental data from Gd-lysozyme microcrystals at varying X-ray intensities.
  • To quantify the ionization state of Gd atoms using phased difference Fourier maps.
  • To explore a new experimental phasing method leveraging local electronic damage and ionization contrast.

Main Methods:

  • Serial femtosecond crystallography (SFX) experiments on Gd-lysozyme microcrystals.
  • Data collection at different X-ray intensities to study electronic damage.
  • Analysis of phased difference Fourier maps to quantify Gd atom ionization.
  • Development of a pattern sorting scheme to enhance ionization contrast.

Main Results:

  • Quantification of Gd atom ionization levels across different X-ray intensities.
  • Demonstration of altered scattering factors due to XFEL radiation damage.
  • Successful development of a pattern sorting scheme to maximize ionization contrast.
  • Evidence that electronic damage can be exploited for experimental phasing.

Conclusions:

  • Electronic damage in XFEL crystallography significantly impacts scattering factors, especially for heavy atoms.
  • The degree of Gd ionization can be accurately quantified from SFX data.
  • A novel experimental phasing strategy can be developed by utilizing XFEL-induced electronic damage and ionization contrast.