Related Experiment Video
Updated: Mar 29, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Density functional study on the hole doping of single-layer SnS2 with metal element X (X = Li, Mg, and Al)
Dandan Yu1, Yanyu Liu, Lili Sun
1Department of Applied Physics, Institute of Advanced Materials Physics, Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Faculty of Science, Tianjin University, Tianjin 300072, People's Republic of China. weizhou@tju.edu.cn.
Abstract:
The effects of metal element X-doping on the electronic and optical properties of single-layer SnS2 were investigated using density functional theory. The results show that the doping is energetically more favorable under S-rich conditions than under Sn-rich conditions. For Li and Mg doping, there is the existence of ionic bonding between the dopants and adjacent S atoms, and the systems exhibit magnetic ground states. However, covalent bonding character is observed in Al-doped single-layer SnS2, and the system exhibits non-magnetic ground states. The optical properties show that the optical absorptions are anisotropic for all doping cases. The X doping not only results in a red shift of the absorption edges, but also enhances the effective utilization in the near-infrared light region. Additionally, Li-doped single-layer SnS2 is active for overall water splitting under visible light radiation whereas Mg and Al-doped SnS2 are only suitable for oxygen evolution.
More Related Videos
08:12Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
09:45Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 2, 2013
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Imperfections in Crystal Structure: Stoichiometric Point Defects
P-N junction
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Valence Bond Theory