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Updated: Mar 29, 2026

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Dopant profiling based on scanning electron and helium ion microscopy.

Augustus K W Chee1, Stuart A Boden2

  • 1Centre for Advanced Photonics and Electronics, Electrical Engineering Division, Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, UK.

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Summary

Scanning helium ion microscopy (SHIM) offers superior doping contrast for mapping donor distributions compared to scanning electron microscopy (SEM). SHIM achieves this without specialized filtering, making it more sensitive for semiconductor analysis.

Keywords:
Doping contrastElectric potentialsEscape depthP–n junctionSecondary electron energy filteringSensitivity limitSurface band-bending

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Microscopy Techniques

Background:

  • Mapping donor distributions is crucial for semiconductor device characterization.
  • Scanning Electron Microscopy (SEM) often requires specialized energy-filtering for effective doping contrast.
  • Secondary Electron (SE) signal analysis is key in SEM for visualizing doping profiles.

Purpose of the Study:

  • To compare the effectiveness of doping contrast generation in SEM and Scanning Helium Ion Microscope (SHIM).
  • To evaluate the sensitivity and capabilities of SHIM for donor profiling.
  • To correlate experimental doping contrast profiles with theoretical potential energy distributions.

Main Methods:

  • Comparative analysis of doping contrast in SEM and SHIM.
  • Utilizing secondary electron (SE) signals for imaging.
  • Employing energy-filtering techniques in SEM.
  • Measuring doping contrast profiles of thin p-layers.
  • Calculating potential energy distributions.

Main Results:

  • SHIM achieves strong doping contrast without energy filtering, unlike SEM.
  • SHIM demonstrates higher sensitivity to donor density changes (≥10^16-10^17 donors/cm³).
  • SHIM's sensitivity limit for acceptors is >2x10^17 acceptors/cm³.
  • Experimental doping contrast profiles correlate well with calculated potential energy distributions.
  • SHIM's shorter SE escape depth (1.8nm) in silicon is advantageous over SEM (7nm).

Conclusions:

  • SHIM is a more effective technique for donor profiling than SEM.
  • The shorter secondary electron escape depth in SHIM enhances sensitivity for subsurface analysis.
  • Low-energy SE signals with short escape depths are optimal for precise donor profiling.