Vibrational Calculations of Higher-Order Weakly Bound Complexes: The He3,4I2 Cases
Álvaro Valdés1, Rita Prosmiti2
1Departamento de Física, Universidad Nacional de Colombia , Calle 26, Cra 39, Edificio 404, Bogotá, Colombia.
Abstract:
The structure and relative stability of higher-order He3,4I2 clusters are investigated by carrying out full-dimensional quantum calculations within the multiconfiguration time-dependent Hartree framework. The full interaction between the I2 molecule and the He atoms is based on analytical three-body ab initio He-I2 potentials obtained from high level ab initio calculations plus the He-He interaction. The low-lying minima on the potential surfaces are found to be very close in energy with the He atoms in a ring encircling the dopant for the global minimum structure, while for the local minima one or two of the He atoms prefer the linear arrangements along the I2-axis. Such classical description on the basis of the potential energy landscape is corrected by including anharmonic quantum effects, present in highly floppy systems, by carrying out full dimensional quantum calculations. The potential energy operator was constructed by natural potential fits, while a mode combination scheme was employed to optimize the computational cost of the improved relaxation calculations. The obtained results predict the relative stability of the He3,4I2 isomers at zero temperature and provide benchmark data on binding energies and structural properties of these van der Waals systems. The (2,1) and (2,2), involving two He atoms in the T-shape and one or two He atoms in the linear configurations, respectively, are found to be the most stable isomers, although extremely close in energy with the (3,0) and (4,0) ones as predicted by classical optimizations. Comparison with experimental data on similar systems at low temperatures is also discussed. This analysis indicates once more the importance of quantum delocalization and the need of accurate quantum-mechanical treatments to characterize such doped helium nanosystems.
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