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Metal-Semiconductor Junctions

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The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...

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Related Experiment Video

Updated: Mar 29, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Atomically precise semiconductor--graphene and hBN interfaces by Ge intercalation.

N I Verbitskiy^1,2,3, A V Fedorov^2,4,5, G Profeta^6,7

¹Faculty of Physics, University of Vienna, Strudlhofgasse 4, A-1090 Vienna, Austria.

Scientific Reports

|December 8, 2015

Summary

This summary is machine-generated.

Researchers developed a new method to integrate graphene and hexagonal boron nitride (hBN) into semiconductor technology. This technique creates high-quality interfaces, enabling advanced nanoelectronic applications by preserving the intrinsic electronic properties of 2D materials.

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

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Published on: July 18, 2025

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Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Residue-Free Fabrication of van der Waals Heterostructures of Two-Dimensional Materials

Published on: July 18, 2025

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Graphene's potential in nanoelectronics is hindered by challenges in integrating it with semiconductor technology.
Achieving large single-crystalline domains on dielectrics/semiconductors and tailoring interfaces remain significant limitations for real-world applications.

Purpose of the Study:

To introduce a novel direct bottom-up method for fabricating high-quality, atomically precise interfaces.
To enable the integration of 2D materials like graphene and hexagonal boron nitride (hBN) with classical semiconductors.

Main Methods:

Fabrication of interfaces using Germanium (Ge) intercalation between 2D materials and semiconductors.
Utilized angle-resolved photoemission spectroscopy (ARPES) to analyze electronic properties.
Employed complementary Density Functional Theory (DFT) modeling for theoretical validation.

Main Results:

Demonstrated epitaxially grown graphene with an underlying Ge monolayer exhibits Dirac Fermions unaffected by the substrate.
Observed an unperturbed electronic band structure of hexagonal boron nitride (hBN) through the new interface.
Confirmed the creation of intrinsic relativistic 2D electron gas.

Conclusions:

The Ge intercalation method provides a promising pathway for integrating graphene and hBN into semiconductor technology.
This approach overcomes previous limitations, paving the way for advanced nanoelectronic devices.
The fabricated interfaces maintain the unique electronic properties of 2D materials.