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Updated: Mar 29, 2026

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Design, Fabrication, and Experimental Characterization of Plasmonic Photoconductive Terahertz Emitters
Published on: July 8, 2013
15.4K
Plasmon Field Effect Transistor for Plasmon to Electric Conversion and Amplification.
Hossein Shokri Kojori1, Ju-Hyung Yun2,3, Younghun Paik1
1Department of Electrical and Computer Engineering, University of Miami , Miami, Florida 33124, United States.
Nano Letters
|December 15, 2015
Summary
Researchers developed a plasmon field effect transistor that uses metal nanostructures to detect optical energy and convert it to electricity. This device enhances current amplification for improved optoelectronic applications.
Area of Science:
- Optoelectronics
- Plasmonics
- Nanotechnology
Background:
- Direct coupling of optical energy excitations via plasmon resonances can enhance optoelectronic devices.
- Existing methods for plasmon resonance energy detection and conversion face limitations in efficiency and spectral range.
Purpose of the Study:
- To introduce a novel plasmon field effect transistor (PFET) device structure.
- To elucidate the working mechanism for plasmon resonance energy detection and electric conversion using PFETs.
- To demonstrate the potential for ultrawide spectral range applications.
Main Methods:
- Incorporation of metal nanostructures within a thin film transistor (TFT) device architecture.
- Collection of plasmonically induced hot electrons from isolated metal nanostructures.
- Utilizing internal electric fields and quantum tunneling at the metal-semiconductor junction for efficient collection and amplification.
Main Results:
- Demonstrated a PFET capable of collecting and amplifying plasmonically induced hot electrons.
- Achieved significant amplification of drain current due to hot electron contribution.
- Showcased the device's potential for ultrawide spectral range operation.
Conclusions:
- The developed PFET architecture offers a new pathway for efficient plasmon resonance energy detection and electric conversion.
- The device's design facilitates highly efficient hot electron collection and amplification.
- The tunability of plasmonic nanostructures enables versatile applications across an ultrawide spectral range.

