Related Experiment Video
Updated: Mar 28, 2026

07:56
Preparation of Liquid Crystal Networks for Macroscopic Oscillatory Motion Induced by Light
Published on: September 20, 2017
12.3K
Orientation Control in Thin Films of a High-χ Block Copolymer with a Surface Active Embedded Neutral Layer
Jieqian Zhang1, Michael B Clark2, Chunyi Wu1
1The Dow Chemical Company , 455 Forest Street, Marlborough, Massachusetts 01752, United States.
Nano Letters
|December 20, 2015
Summary
An embedded neutral layer (ENL) additive enables high-χ block copolymers (BCPs) for advanced patterning. This technology balances surface tensions, facilitating the creation of sub-10 nm features for integrated circuits.
Area of Science:
- Materials Science
- Nanotechnology
- Polymer Chemistry
Background:
- Directed self-assembly (DSA) of block copolymers (BCPs) is crucial for advanced integrated circuit manufacturing.
- Current BCPs like PS-b-PMMA have limited patterning resolution due to weak Flory interaction parameters (χ).
- High-χ BCPs offer smaller feature sizes but struggle with perpendicular orientation due to surface energy imbalances.
Purpose of the Study:
- To develop a novel approach to enable the use of high-χ BCPs for sub-10 nm feature patterning.
- To overcome the challenge of achieving perpendicular orientation in high-χ BCP thin films.
- To introduce an additive that balances surface tensions at the film's air interface.
Main Methods:
- A polymeric surface active additive, an embedded neutral layer (ENL), was designed and mixed into BCP solutions.
- The ENL comprises a second BCP with a neutral block and a surface anchoring block.
- The ENL segregates to the top of the BCP film during casting and annealing, balancing surface tensions.
Main Results:
- The ENL additive successfully balanced surface tensions at the top of the BCP thin film.
- Perpendicular orientation of microdomains was achieved, enabling smaller feature sizes.
- DSA was demonstrated using the ENL formulation on a chemical patterned template with a single coat and thermal annealing.
Conclusions:
- The embedded neutral layer (ENL) technology effectively enables the use of high-χ BCPs for advanced patterning.
- This approach addresses surface energy imbalances, facilitating sub-10 nm feature creation.
- ENL technology shows significant promise for future integrated circuit manufacturing.

