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Updated: Mar 28, 2026

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
In Operando X-Ray Nanodiffraction Reveals Electrically Induced Bending and Lattice Contraction in a Single Nanowire
Jesper Wallentin1, Markus Osterhoff1, Tim Salditt1
1Institute for X-Ray Physics, University of Göttingen, Friedrich-Hund-Platz 1, 37077, Göttingen, Germany.
Abstract:
Hard X-ray diffraction (XRD) using a nanofocused beam is used to measure both lattice contraction and bending in a single nanowire device under electric bias. The shape of the nanowire is reconstructed in 3D with sub-nanometer precision. As the bias voltage is gradually increased, nonreversible structural changes in the contact regions are observed, correlated with degradation of the electrical conductance.
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