Infrared light gated MoS₂ field effect transistor.

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Molybdenum disulfide (MoS₂) is a 2D material with unique properties.
• Ferroelectric materials like Pb(Mg(1/3)Nb(2/3))O₃-PbTiO₃ (PMN-PT) exhibit tunable polarization.
• Integrating 2D materials with ferroelectrics offers new device functionalities.

Purpose of the Study:

• To demonstrate an infrared (IR) light-gated MoS₂ transistor.
• To investigate the IR response mechanism in a MoS₂/PMN-PT heterostructure.
• To explore the potential of this device as an IR photodetector.

Main Methods:

• Fabrication of a MoS₂ monolayer transistor on a (111) PMN-PT single crystal substrate.
• Modulation of MoS₂ channel drain current using IR illumination.
• Characterization of the device's IR responsivity and response mechanism.

Main Results:

• The MoS₂ transistor demonstrated reversible modulation of drain current under IR illumination.
• A high IR responsivity of 114%/Wcm⁻² was achieved.
• The IR response is attributed to the pyroelectric effect in PMN-PT inducing a field effect.

Conclusions:

• The developed MoS₂ transistor functions as a novel IR photodetector.
• The pyroelectric field effect in PMN-PT is key to the IR modulation of MoS₂.
• This work highlights the potential of MoS₂-based heterostructures in broadband optoelectronics.