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Updated: Mar 28, 2026

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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
Published on: August 28, 2018
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Large-Area Monolayer MoS2 for Flexible Low-Power RF Nanoelectronics in the GHz Regime
Hsiao-Yu Chang1, Maruthi Nagavalli Yogeesh1, Rudresh Ghosh1
1Microelectronics Research Center, The University of Texas at Austin, Austin, TX, 78758, USA.
Advanced Materials (Deerfield Beach, Fla.)
|December 29, 2015
Abstract:
Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.
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