Dielectric and Ferroelectric Performance of Pb(Zr(x)Ti(1-x))O3 Thin Films with Compositional Gradients

A series of PZT thin films with compositional gradients were fabricated at ease by a combinatorial chemical solution deposition process. Their dielectric and ferroelectric properties are significantly different from uniform composition PZT films, depending on the composition, the span, and the direction of the compositional gradient. Among samples with the same average Zr content, the down-gradient thin films exhibit better dielectric and ferroelectric properties. PZT thin films with a narrow compositional gradient span favour better dielectric and ferroelectric properties. The down-gradient thin film PZT654 with a Zr-rich layer closest to the Pt substrate, in which the average composition is close to the morphotropic phase boundary (MPB, x = 0.52), shows the best dielectric and ferroelectric performance. These distinct thin films with different dielectric and ferroelectric properties could be designed by adjusting factors such as content, span and direction of the compositional gradient.