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A Modified Oxidative Refinement Process for Removing Boron from Molten Silicon Under Enhanced Electromagnetic Force
Journal of Nanoscience and Nanotechnology
|January 5, 2016
Summary
This study presents a cost-effective method for removing boron from silicon using an oxidizing gas. The innovative technique significantly reduces boron levels, crucial for photovoltaic applications.
Area of Science:
- Materials Science
- Chemical Engineering
- Semiconductor Processing
Background:
- Boron removal from metallurgical grade silicon is critical for photovoltaic applications but challenging due to boron's properties.
- Existing methods like slag treatment and plasma treatment have limitations in efficiency and cost.
- Oxidizing reactive gases offer a promising alternative for efficient and low-cost boron refinement.
Purpose of the Study:
- To develop a modified oxidative refining method for enhanced boron removal from silicon.
- To investigate the vaporization of boron as B(x)H(z)O(y) using gaseous water.
- To reduce processing costs through a reusable crucible system.
Main Methods:
- A modified oxidative refining process involving blowing gaseous water onto a silicon melt.
- Utilizing a segmented crucible to enhance electromagnetic force.
- Employing a reusable quartz crucible within a graphite crucible system.
- Introducing a mixture of Argon (Ar) and water (H2O) at specific flow rates (1.7SLM Ar + 100 ml/h H2O).
Main Results:
- Significant reduction of initial boron content from 13 ppm to 0.3 ppm.
- Enhanced vaporization of boron in the B(x)H(z)O(y) phase due to high vapor pressure at 1700 K.
- Demonstrated a dramatic reduction in processing costs by using a reusable crucible.
Conclusions:
- The modified oxidative refining method effectively removes boron from silicon at reduced costs.
- The process leverages the high vapor pressure of B(x)H(z)O(y) for efficient boron extraction.
- This technique offers a viable solution for purifying silicon for low-cost photovoltaic applications.

