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Tellurium as a high-performance elemental thermoelectric
Siqi Lin1, Wen Li1, Zhiwei Chen1
1Key Laboratory of Advanced Civil Engineering Materials of Ministry of Education, School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai 201804, China.
Elemental tellurium achieves a high thermoelectric figure of merit, demonstrating a strategy for enhancing conductivity via band degeneracy. This breakthrough fills a performance gap for elemental thermoelectrics across a wide temperature range.
Area of Science:
- Materials Science
- Solid State Physics
- Condensed Matter Physics
Background:
- High-efficiency thermoelectric materials necessitate high electrical conductivity.
- Degenerate band valleys provide numerous conduction channels, enhancing conductivity without negatively impacting other properties, thus improving thermoelectric performance.
Purpose of the Study:
- To demonstrate that inherent band nesting in semiconductors can achieve high thermoelectric performance.
- To showcase elemental tellurium as a high-performance thermoelectric material, filling a performance gap for elemental thermoelectrics between 300-700 K.
Main Methods:
- Investigated the thermoelectric properties of elemental tellurium.
- Utilized the concept of inherent band nesting to achieve a large number of effective band valley degeneracy.
Main Results:
- Elemental tellurium exhibited a high thermoelectric figure of merit of unity.
- This performance was achieved across a temperature range of 300-700 K.
- Demonstrated the effectiveness of band nesting for enhancing thermoelectric performance.
Conclusions:
- Elemental tellurium is a promising high-performance thermoelectric material.
- The strategy of utilizing inherent band nesting and band valley degeneracy is effective for improving thermoelectric materials.
- This concept is broadly applicable to other thermoelectrics with similar band structures.
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