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Exfoliation and Analysis of Large-area, Air-Sensitive Two-Dimensional Materials

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Charge trap memory based on few-layer black phosphorus.

Qi Feng¹, Faguang Yan¹, Wengang Luo¹

¹SKLSM, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. kywang@semi.ac.cn.

|January 14, 2016

Summary

This summary is machine-generated.

This study introduces novel nonvolatile memory devices using few-layer black phosphorus channels and a 3D Al2O3/HfO2/Al2O3 gate stack. These devices exhibit a large memory window and stable retention, paving the way for flexible electronics.

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Area of Science:

Materials Science
Nanotechnology
Solid-State Electronics

Background:

Atomically thin layered two-dimensional (2D) materials like black phosphorus (BP) are crucial for advanced electronic devices.
Flexible and transparent electronics require novel materials with unique charge-storage capabilities.

Purpose of the Study:

To demonstrate nonvolatile charge-trap memory devices utilizing few-layer black phosphorus.
To investigate the performance of a 3D Al2O3/HfO2/Al2O3 charge-trap gate stack in these devices.

Main Methods:

Fabrication of field-effect transistors with a few-layer black phosphorus channel.
Integration of a three-dimensional (3D) Al2O3/HfO2/Al2O3 charge-trap gate stack.
Characterization of memory characteristics, including memory window, endurance, and retention.

Main Results:

Achieved nonvolatile charge-trap memory devices with large hysteresis.
Observed an unprecedented memory window exceeding 12 V due to high-k HfO2 trapping.
Demonstrated high endurance (>120 cycles) and stable retention (∼30% charge loss after 10 years).

Conclusions:

The developed devices offer a promising route for flexible and transparent memory applications.
The combination of 2D materials with high-k charge-trap gate stacks opens new avenues in nonvolatile memory research.