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Resistive switching and electrical control of ferromagnetism in a Ag/HfO₂/Nb:SrTiO₃/Ag resistive random access memory

Shaoqing Ren1, Gengchang Zhu1, Jihao Xie1

  • 1School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|January 14, 2016
PubMed

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