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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics
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Probing C84-embedded Si Substrate Using Scanning Probe Microscopy and Molecular Dynamics

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Valence band offset at the Si/SiSn interface by applying deep level transient spectroscopy

Victor-Tapio Rangel-Kuoppa1, Alexander Tonkikh2, Nikolay Zakharov3

  • 1Institute of Semiconductor- and Solid State Physics, Johannes Kepler Universität, A-4040 Linz, Austria.

Nanotechnology
|January 19, 2016
PubMed

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