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Transport Properties of a MoS2/WSe2 Heterojunction Transistor and Its Potential for Application

Amirhasan Nourbakhsh1, Ahmad Zubair1, Mildred S Dresselhaus1

  • 1Department of Electrical Engineering and Computer Sciences and ‡Department of Physics, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States.

Nano Letters
|January 20, 2016
PubMed

Keywords:
Transition metal dichalcogenideband-to-band tunnelingheterojunction transistormultivalued logicnegative differential resistance

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