Structural and electronic properties of zigzag InP nanoribbons with Stone-Wales type defects

R C Longo1, J Carrete, L M Varela

  • 1Departamento de Física de la Materia Condensada, Facultad de Física, Universidad de Santiago de Compostela, E-15782 Santiago de Compostela, Spain. Materials Science & Engineering Department, The University of Texas at Dallas, Richardson, TX 75080, USA.

Summary

Stone-Wales defects in indium phosphide nanoribbons create ripples and alter electronic properties. These defects widen the band gap, potentially enabling new semiconductor applications.

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