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Partially Fluorinated Graphene: Structural and Electrical Characterization.

Lanxia Cheng1, Srikar Jandhyala1, Greg Mordi1

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Summary
This summary is machine-generated.

The study reveals that ionic fluorine bonding in fluorinated graphene, observed at low fluorine content, creates two Dirac points. Higher fluorine content shifts bonding to covalent, increasing graphene sheet resistance.

Keywords:
CVD grapheneGFETsRamanXPSfluorinated grapheneionic bond

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Fluorinated graphene shows promise for nanoelectronic applications.
  • The influence of fluorine bonding on graphene's electrical properties, particularly at low concentrations, requires further investigation.

Purpose of the Study:

  • To experimentally explore the impact of fluorine bonding nature on electrical behaviors of graphene devices at varying fluorine content.
  • To understand the structural evolution of graphene during fluorination.

Main Methods:

  • Chemical vapor deposition (CVD) graphene fluorination using CF4 plasma.
  • Analysis using Raman spectroscopy and X-ray photoelectron spectroscopy (XPS).
  • Electrical measurements on graphene field-effect transistor (GFET) devices.

Main Results:

  • XPS revealed co-existing covalent and ionic fluorine bonding after 10s of fluorination.
  • Ionic C-F bonding at low fluorine content correlated with two Dirac points in GFETs.
  • Increased fluorination led to a transition to covalent bonding, significantly increasing sheet resistance.
  • Temperature-dependent Raman mapping showed inhomogeneous defluorination starting at ~150 °C for low coverage, while fully fluorinated graphene was stable up to ~300 °C.

Conclusions:

  • The nature of fluorine bonding (ionic vs. covalent) critically affects the electrical properties of fluorinated graphene.
  • Ionic C-F bonds are dominant at low fluorine content, influencing Dirac points, while covalent bonds dominate at higher content, increasing resistance.
  • Understanding these bonding dynamics is crucial for designing advanced graphene-based nanoelectronic devices.