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Electrical Properties of Synthesized Large-Area MoS₂ Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

Tae-Young Kim1, Matin Amani2,3, Geun Ho Ahn2

  • 1Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University , Seoul 08826, Korea.

ACS Nano
|January 29, 2016
PubMed

Keywords:
contact resistanceelectronic transport propertiesfield-effect transistorsgate-bias stress effectinkjet printingmolybdenum disulfide

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