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Photothermoelectric Effects in Nanoporous Silicon
Yu-Sheng Lai1, Chao-Yang Tsai2, Chin-Kai Chang2
1National Nano Device Laboratories, National Applied Research Laboratories, 26, Prosperity Road I, Hsinchu, 30078, Taiwan.
Advanced Materials (Deerfield Beach, Fla.)
|January 30, 2016
Abstract:
The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light-induced local heating from illumination at the Au-electrode/NPSi interface.

