Super High-k Dielectric via Composition-Dependent Hafnium Zirconium Oxide Superlattice for Si Nanosheet...

This paper presents an advanced dielectric engineering approach utilizing a composition-dependent hafnium zirconium oxide (Hf_1-xZr_xO₂) superlattice (SL) structure for Si nanosheet gate-all-around field-effect transistors (Si NSGAAFETs). The dielectric (DE) properties of solid solution (SS) and SL Hf_1-xZr_xO₂ capacitors were systematically characterized through capacitance-voltage (C-V) and polarization-voltage (P-V) measurements under varying annealing conditions. A high dielectric constant (k-value) of 59 was achieved in SL-Hf_0.3Zr_0.7O₂, leading to a substantial reduction in equivalent oxide thickness (EOT). Furthermore, the SL-Hf_0.3Zr_0.7O₂ dielectric was integrated into Si NSGAAFETs, with the interfacial layer (IL) further optimized via NH₃ plasma treatment. The resulting devices exhibited superior electrical performance, including an enhanced ON-OFF current ratio (I_ON/I_OFF) reaching 10⁷, an increased drive current, and significantly reduced gate leakage. These results highlight the potential of SL-Hf_0.3Zr_0.7O₂ as a high-k dielectric solution for overcoming EOT scaling challenges in advanced CMOS technology and enabling further innovation in next-generation logic applications.