Electrically driven single photon source at high temperature

We present a theoretical model for an electrically driven single photon source operating at high temperatures. We show that decoherence, which is usually the main obstacle for operating single photon sources at high temperatures, ensures an efficient operation of the presented electrically driven single photon source at high temperatures. The single-photon source is driven by a single electron source attached to a heterostructure semiconductor nanoring. The electron's dynamics in the nanoring and the subsequent recombination with the hole is described by the generalized master equation with a Hamiltonian based on tight-binding model, taking into account the electron-LO phonon interaction. As a result of decoherence, an almost 100% single photon emission with a strong antibunching behavior i.e. g(2)(0) << 1 at high temperature up to 300 K is achieved.