Tuning the Band Gap of Cu₂ZnSn(S,Se)₄ Thin Films via Lithium Alloying
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Updated: Oct 23, 2026

Atom Probe Tomography Studies on the CuIn,GaSe2 Grain Boundaries
Published on: April 22, 2013
Yanchun Yang1, Xiaojiao Kang1, Lijian Huang1
1State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences , 5625 Renmin Street, Changchun, Jilin 130022, China.
Abstract:
Alkali metal doping plays a crucial role in fabricating high-performance Cu(In,Ga)(S,Se)2 and Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cells. In this study, we report the first experimental observation and characterizations of the alloyed Li(x)Cu(2-x)ZnSn(S,Se)4 thin films. It is found that Cu(+) ions in Cu2ZnSn(S,Se)4 thin films can be substituted with Li(+) ions, forming homogeneous Li(x)Cu(2-x)ZnSn(S,Se)4 (0 ≤ x ≤ 0.29) alloyed thin films. Consequently, the band gap, conduction band minimum, and valence band maximum of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films are profoundly affected by Li/Cu ratios. The band alignment at the Li(x)Cu(2-x)ZnSn(S,Se)4/CdS interface can be tuned by changing the Li/Cu ratio. We found that the photovoltaic parameters of the Li(x)Cu(2-x)ZnSn(S,Se)4 solar cell devices are strongly influenced by the Li/Cu ratios. Besides, the lattice constant, carrier concentration, and crystal growth of Li(x)Cu(2-x)ZnSn(S,Se)4 thin films were studied in detail.
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