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Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering
Sajjad Hussain1, Muhammad Arslan Shehzad1, Dhanasekaran Vikraman1
1Graphene Research Institute, Sejong University, Seoul 143-747, Republic of Korea. jwjung@sejong.ac.kr and Institute of Nano and Advanced Materials Engineering, Sejong University, Seoul 143-747, Republic of Korea.
Researchers developed a new method for growing large-area molybdenum disulfide (MoS2) films using radio frequency (RF) sputtering and sulfurization. This technique allows for controlled layer thickness, crucial for future electronics and optoelectronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2) is a promising 2D material for advanced electronic and optoelectronic devices.
- Scalable and controlled synthesis of high-quality MoS2 films remains a challenge for practical applications.
Purpose of the Study:
- To develop a layer-controlled, continuous, and large-area synthesis method for MoS2 films.
- To investigate the electrical properties of MoS2 films fabricated using the proposed method.
Main Methods:
- A two-step process involving RF magnetron sputtering of MoO3 followed by post-annealing and sulfurization.
- Controlled deposition of atomically thin MoO3 films at 300 °C.
- Sulfurization and annealing at 650 °C for 1 hour to form MoS2.
Main Results:
- Layer thickness of MoS2 was successfully controlled by adjusting the sputtering time.
- Fabricated MoS2 transistors demonstrated high carrier mobility (21-25 cm²/Vs) and excellent on/off ratios (up to 10⁷).
- Continuous and large-area MoS2 films were grown on SiO2/Si substrates.
Conclusions:
- The proposed RF sputtering and sulfurization method offers a viable route for scalable MoS2 synthesis.
- The high performance of fabricated transistors highlights the potential of this method for future electronics and optoelectronics.
- This technique provides a new paradigm for MoS2 growth in next-generation devices.
