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Electron mobility in semi-metal HgCdTe quantum wells: dependence on the well width

E O Melezhik1, J V Gumenjuk-Sichevska1, F F Sizov1

  • 1Institute for Semiconductor Physics, National Academy of Sciences of Ukraine, pr. Nauki 41, Kiev, 03028 Ukraine.

Springerplus
|February 5, 2016
PubMed

Keywords:
Boltzmann transport equationHgTeInelastic scatteringMobilityScreening

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