Related Experiment Video
Updated: Mar 26, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
Published on: May 13, 2020
Random Field Driven Spatial Complexity at the Mott Transition in VO(2)
Shuo Liu1, B Phillabaum1, E W Carlson1
1Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA.
Abstract:
We report the first application of critical cluster techniques to the Mott metal-insulator transition in vanadium dioxide. We show that the geometric universal properties of the metallic and insulating puddles observed by scanning near-field infrared microscopy are consistent with the system passing near criticality of the random field Ising model as temperature is varied. The resulting large barriers to equilibrium may be the source of the unusually robust hysteresis phenomena associated with the metal-insulator transition in this system.
Related Concept Videos
Valence Bond Theory
Valence Bond Theory
Woodward–Hoffmann Selection Rules and Microscopic Reversibility
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Magnetic Field due to Moving Charges
Consider a point charge moving with a constant velocity. Like the electric field, the magnetic field at any point is directly proportional to the magnitude of the charge and inversely proportional to the square of the distance between the source point and the field point. However, unlike the electric field, the magnetic field is always perpendicular to the plane containing the line...
Magnetic Vector Potential
Consider an ideal solenoid with n turns per unit length and radius R. If I is the current through the solenoid, the magnetic field inside the solenoid is expressed as the product of vacuum...

