Facile Preparation of Highly Conductive Metal Oxides by Self-Combustion for Solution-Processed Thermoelectric...

Highly conductive indium zinc oxide (IZO) thin films were successfully fabricated via a self-combustion reaction for application in solution-processed thermoelectric devices. Self-combustion efficiently facilitates the conversion of soluble precursors into metal oxides by lowering the required annealing temperature of oxide films, which leads to considerable enhancement of the electrical conductivity of IZO thin films. Such enhanced electrical conductivity induced by exothermic heat from a combustion reaction consequently yields high performance IZO thermoelectric films. In addition, the effect of the composition ratio of In to Zn precursors on the electrical and thermoelectric properties of the IZO thin films was investigated. IZO thin films with a composition ratio of In:Zn = 6:2 at the low annealing temperature of 350 °C showed an enhanced electrical conductivity, Seebeck coefficient, and power factor of 327 S cm(-1), 50.6 μV K(-1), and 83.8 μW m(-1) K(-2), respectively. Moreover, the IZO thin film prepared at an even lower temperature of 300 °C retained a large power factor of 78.7 μW m(-1) K(-2) with an electrical conductivity of 168 S cm(-1). Using the combustive IZO precursor, a thermoelectric generator consisting of 15 legs was fabricated by a printing process. The thermoelectric array generated a thermoelectric voltage of 4.95 mV at a low temperature difference (5 °C). We suggest that the highly conductive IZO thin films by self-combustion may be utilized for fabricating n-type flexible printed thermoelectric devices.