Gate-Sensing Coherent Charge Oscillations in a Silicon Field-Effect Transistor

Area of Science:

• Quantum Computing
• Solid State Physics
• Nanotechnology

Background:

• Miniaturization of complementary metal-oxide-semiconductor (CMOS) technology leads to quantum mechanical effects that limit field-effect transistor performance.
• These quantum effects, including tunneling and coherence, present opportunities for quantum information processing using existing CMOS infrastructure.

Purpose of the Study:

• To demonstrate coherent charge oscillations in a silicon nanowire transistor.
• To explore the potential of harnessing quantum phenomena in CMOS technology for quantum information processing.

Main Methods:

• Observation of coherent charge oscillations in a double quantum dot within a silicon nanowire transistor.
• Detection via dispersive interaction with a radio frequency resonant circuit coupled through the gate.
• Analysis of differential capacitance changes and Landau-Zener-Stückelberg-Majorana interference patterns.

Main Results:

• Observation of coherent charge oscillations and Landau-Zener-Stückelberg-Majorana interference.
• Demonstration of charge coherent control and readout in a silicon transistor.
• Determination of a charge coherence time (T2) of approximately 100 picoseconds.

Conclusions:

• Quantum mechanical effects in silicon transistors can be utilized for quantum information processing.
• This work paves the way for implementing charge and spin qubits within existing CMOS technology.
• The findings highlight the potential of silicon-based quantum computing architectures.