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Updated: Mar 25, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Quantum Dephasing in a Gated GaAs Triple Quantum Dot due to Nonergodic Noise
M R Delbecq1, T Nakajima1, P Stano1,2
1Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako-shi, Saitama 351-0198, Japan.
Abstract:
We extract the phase coherence of a qubit defined by singlet and triplet electronic states in a gated GaAs triple quantum dot, measuring on time scales much shorter than the decorrelation time of the environmental noise. In this nonergodic regime, we observe that the coherence is boosted and several dephasing times emerge, depending on how the phase stability is extracted. We elucidate their mutual relations, and demonstrate that they reflect the noise short-time dynamics.
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