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J Sellés¹, C Brimont¹, G Cassabois¹

¹Laboratoire Charles Coulomb (L2C), UMR 5221 CNRS-Université de Montpellier, F-34095 Montpellier, France.

Scientific Reports

|February 19, 2016

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This summary is machine-generated.

Researchers developed a deep ultraviolet (UV) microlaser using gallium nitride/aluminum nitride (GaN/AlN) quantum wells on silicon. This breakthrough enables efficient 275 nm UV light generation at room temperature, paving the way for silicon-based nanophotonics.

Area of Science:

Optoelectronics and Photonics
Semiconductor Physics
Materials Science

Background:

Deep ultraviolet (UV) semiconductor lasers are crucial for applications in optical storage and biochemistry.
Developing efficient deep UV laser active layers often involves complex nitride heterostructures and specialized substrates like sapphire or silicon carbide.
Previous research focused on AlGaN quantum wells on AlN, sapphire, and SiC substrates for deep UV emission.

Purpose of the Study:

To report an efficient and simple method for creating deep UV semiconductor lasers.
To demonstrate a deep UV microlaser operating at 275 nm at room temperature.
To explore the potential of nitride nanophotonic platforms on silicon substrates.

Main Methods:

Growth of binary GaN/AlN quantum wells on a thin AlN buffer layer on a silicon substrate.

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Embedding the active region within microdisk photonic resonators with high quality factors.

Optical pumping to achieve lasing at 275 nm.

Main Results:

Demonstration of a deep UV microlaser operating at 275 nm at room temperature.
Achieved a spontaneous emission coupling factor (β) of (4 ± 2) × 10⁻⁴.
The active layer can be released from the silicon substrate and grown on silicon-on-insulator (SOI) substrates.

Conclusions:

An efficient and simple solution for deep UV lasers using GaN/AlN quantum wells on silicon has been developed.
The demonstrated microlaser operates effectively at room temperature, indicating practical potential.
The compatibility with silicon and SOI substrates opens avenues for future nitride nanophotonic integration on silicon platforms.