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Demonstration of Equal-Intensity Beam Generation by Dielectric Metasurfaces
Published on: June 7, 2019
Semimetallization of dielectrics in strong optical fields
Ojoon Kwon1,2, Tim Paasch-Colberg3, Vadym Apalkov4
1Department of Physics, Center for Attosecond Science and Technology, Pohang University of Science and Technology, Pohang, 37673, Republic of Korea.
Ultrafast optical fields induce reversible semimetallization in dielectrics like sapphire and quartz. This phenomenon, driven by Wannier-Stark localization, suggests potential for petahertz optoelectronics.
Area of Science:
- Solid-state physics
- Ultrafast optics
- Materials science
Background:
- Semiconductor research is driven by the need for faster signal processing.
- Intense optical fields enable novel phenomena and applications in solids.
- Femtosecond optical fields offer potential for petahertz optoelectronic devices.
Purpose of the Study:
- To investigate the universality of strong-field-induced semimetallization in dielectrics.
- To compare the semimetallization phenomenon in sapphire, calcium fluoride, and quartz.
- To explore the potential for petahertz optoelectronics.
Main Methods:
- Employing a carrier-envelope-phase stabilized, few-cycle strong optical field.
- Inducing and observing semimetallization in sapphire, calcium fluoride, and quartz.
- Analyzing the material response to strong optical fields on a femtosecond timescale.
Main Results:
- Demonstrated reversible semimetallization in sapphire, calcium fluoride, and quartz.
- Observed remarkable similarity in the semimetallization phenomenon across different dielectrics.
- Attributed the ultrafast semimetallization to strong Wannier-Stark localization and Zener-type tunneling.
Conclusions:
- The strong-field-induced semimetallization in dielectrics exhibits universal behavior.
- Wannier-Stark state localization provides a consistent physical explanation for the observed phenomenon.
- These findings pave the way for developing petahertz-rate optoelectronic devices.
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