¹H NMR of Labile Protons: Deuterium (²H) Substitution
π Electron Effects on Chemical Shift: Overview
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Chul Lee1, Jiho Kim1, SangJin Kim2,3
1Department of Physics, University of Seoul, Seoul 130-743, Republic of Korea.
High-energy proton irradiation significantly enhances graphene
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