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Updated: Mar 25, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Orbital Selectivity in Scanning Tunneling Microscopy: Distance-Dependent Tunneling Process Observed in Iron Nitride
Y Takahashi1, T Miyamachi1, K Ienaga1
1Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8581, Japan.
Abstract:
In scanning tunneling microscopy, orbital selectivity of the tunneling process can make the topographic image dependent on a tip-surface distance. We have found reproducible dependence of the images on the distance for a monatomic layer of iron nitride formed on a Cu(001) surface. Observed atomic images systematically change between a regular dot array and a dimerized structure depending on the tip-surface distance, which turns out to be the only relevant parameter in the image variation. An accompanied change in the weight of Fe-3d local density of states to a tunneling background was detected in dI/dV spectra. These have been attributed to a shift in surface orbitals detected by the tip from the d states to the s/p states with increasing the tip-surface distance, consistent with an orbital assignment from first-principles calculations.
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