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Beam damage by the induced electric field in transmission electron microscopy
1Department of Physics, Arizona State University, Tempe, AZ 85287-1504, USA.
Micron (Oxford, England : 1993)
|February 24, 2016
Summary
Electron irradiation induces electric fields in insulating thin films, causing damage at the illumination periphery. These fields drive ion diffusion, explaining phenomena like edge smoothing in transmission electron microscopy (TEM).
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electron Microscopy
Background:
- Electron irradiation of insulating thin films can induce significant electric fields.
- Observed damage phenomena are often linked to these induced fields, termed damage by the induced electric field (DIEF).
Purpose of the Study:
- To analyze electric fields induced by broad-beam electron illumination in insulating thin films using transmission electron microscopy (TEM).
- To interpret observed damage phenomena through the mechanism of damage by the induced electric field (DIEF).
Main Methods:
- Analysis of electric fields generated during broad-beam electron illumination of insulating thin film samples in TEM.
- Correlation of electric field distribution with observed damage patterns and material modifications.
Main Results:
- Significant electric fields are concentrated at the periphery of the illumination area, not necessarily the center.
- Induced electric fields can drive cation and anion diffusion, leading to material transport within the specimen.
- Specific field configurations in wedge-shaped or edge regions contribute to phenomena like edge smoothing.
Conclusions:
- The distribution and strength of induced electric fields are critical factors in electron-beam-induced damage in insulating thin films.
- DIEF provides a viable mechanism for explaining various damage and modification phenomena observed in TEM.
- Understanding these electric fields is crucial for controlling electron-beam interactions with insulating materials.
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