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    Area of Science:

    • Solid-state physics
    • Optical engineering
    • Terahertz (THz) science and technology

    Background:

    • Silicon carbide (SiC) is a wide bandgap semiconductor with potential applications in high-power electronics and optics.
    • Understanding its optical properties in the terahertz (THz) frequency range is crucial for developing advanced THz devices.

    Purpose of the Study:

    • To comprehensively characterize the optical properties of 4H-SiC in the THz region.
    • To determine the refractive indices and transparency range for 4H-SiC.
    • To assess the material's suitability for THz frequency conversion and high-power applications.

    Main Methods:

    • Optical properties were measured using time-domain and Fourier transform spectroscopy.
    • Measurements were conducted in the frequency range of 0.1–20 THz.
    • Refractive indices were approximated using Sellmeier equations based on experimental data and published results.

    Main Results:

    • A high-transparency region for 4H-SiC was identified between <0.1 THz and 10 THz.
    • Sellmeier equations were derived for both ordinary (o-wave) and extraordinary (e-wave) refractive indices.
    • Phase-matched frequency conversion was found to be feasible across visible, mid-IR, and far-IR (THz) regions, extending beyond 17 μm.

    Conclusions:

    • 4H-SiC demonstrates an extremely low absorption coefficient and a high damage threshold in the THz range.
    • The material's optical properties and phase-matching capability make it ideal for high-power THz optics and generation.
    • 4H-SiC is a promising material for advanced THz optical systems and frequency conversion technologies.