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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
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Epitaxial growth of iridate pyrochlore Nd2Ir2O7 films
J C Gallagher1, B D Esser2, R Morrow3
1Department of Physics, The Ohio State University, Columbus, OH 43210, USA.
Scientific Reports
|March 1, 2016
Summary
Epitaxial neodymium iridium oxide (Nd2Ir2O7) films were successfully grown on yttria-stabilized zirconia (YSZ) substrates. This study reveals the crystallization mechanism and ordered pyrochlore structure of Nd2Ir2O7 films.
Area of Science:
- Materials Science
- Solid State Chemistry
- Thin Film Deposition
Background:
- Neodymium iridium oxide (Nd2Ir2O7) is a pyrochlore material with potential electronic applications.
- Epitaxial growth of complex oxides is crucial for advanced material properties.
- Understanding crystallization mechanisms is key to controlling film quality.
Purpose of the Study:
- To grow phase-pure epitaxial Nd2Ir2O7 films on YSZ substrates.
- To investigate the crystallization mechanism of Nd2Ir2O7 during post-annealing.
- To characterize the structural and epitaxial properties of the grown films.
Main Methods:
- Off-axis sputtering for film deposition.
- Post-growth annealing for crystallization.
- X-ray diffraction (XRD) for phase purity and epitaxy.
- Scanning transmission electron microscopy (STEM) for microstructural analysis.
Main Results:
- Phase-pure epitaxial Nd2Ir2O7 films were successfully grown on (111)-oriented YSZ.
- STEM revealed clear pyrochlore ordering of Nd and Ir within the films.
- The epitaxial relationship between Nd2Ir2O7 and YSZ was confirmed.
- Interfacial regions showed some polycrystalline iridium (Ir) nanocrystals.
Conclusions:
- Epitaxial Nd2Ir2O7 films can be reliably grown using sputtering and annealing.
- Post-annealing is critical for achieving the desired pyrochlore ordering.
- The study provides insights into the crystallization process for optimizing film properties.
